MNEMOSYNE: A non-volatile memory designed for space constraints and harsh environments in space applications
We are very pleased to present you an innovative storage solution of the latest generation, completely developed and produced in Europe. Its unique features offer a completely new solution to storage problems in space applications.
This new generation of radiation-resistant, non-volatile memories is manufactured in one of the most advanced production facilities currently available using the 22 nm FD-SOI process. Thanks to the proven manufacturing method, the component has a very high memory density and is available in versions from 128 Mbit to 1 Gbit. Further convincing features are the guarantee of a 20-year data integrity or the availability of a serial or parallel interface. In addition, STT MRAM technology provides SEU immunity for the memory cells.
Here is a link to the compilation of all relevant information about the new latest generation memory module. You will have all the important details and features of the module at a glance by clicking this button.