Freebird Semiconductor’s FBS-GAM02P-C-PSE Series Radiation Tolerant High Speed Multifunction Power HEMT Gate Driver Module  incorporates eGaN® HEMTs with intended end use design within commercial satellite space environments. These development modules contain two independent high speed gate drive circuits (consisting entirely of eGaN ® switching elements), shoot-through prevention logic (for a Half-Bridge configuration) and +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. The FBS-GAM02P-C-PSE is intended to drive external Freebird eGaN ® HEMT power switch transistors rated up to 100V (refer to Table

1, Page 11 for device options).