50V Rad Tolerant High Speed Multifunction Power HEMT Driver
  • 50V Fully De-Rated Operation internally utilizing 100V Rated eGaN® HEMT technology
  • Independent Low and High Side eGaN® HEMT Gate Drivers
  • Four Possible Configurations:
  • Single Low Side Gate Driver
  • Single High Side Gate Driver
  • Independent High and Low Side Gate Drivers
  • Half-Bridge Gate Drivers With Shoot
  • Through Protection
  • Internal Shoot-Through Protection
  • Internal Power Good Circuitry
  • High Speed Switching Capability:1.0+MHz
  • Rugged Compact Molded SMT Package
  • “Pillar” I/O Pads
  • Drives External eGaN® Switching Elements
  • No Bipolar Technology
  • Commercially Screened

Development Vehicle for:

Freebird Semiconductor’s FBS-GAM02P-C-PSE Series Radiation Tolerant High Speed Multifunction Power HEMT Gate Driver Module  incorporates eGaN® HEMTs with intended end use design within commercial satellite space environments. These development modules contain two independent high speed gate drive circuits (consisting entirely of eGaN ® switching elements), shoot-through prevention logic (for a Half-Bridge configuration) and +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. The FBS-GAM02P-C-PSE is intended to drive external Freebird eGaN ® HEMT power switch transistors rated up to 100V (refer to Table
1, Page 11 for device options).
  • Power Switches/Actuators
  • Single and Multi-Phase Motor Phase Drivers
  • Commercial Satellite EPS & Avionics
  • High Speed DC-DC Conversion




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