Compliant with MIL-STD-810
The 3D4D64G72LB2809 is a high-speed DDR4 SDRAM with a capacity of 64 Gbits, organized as 1024M x 64 bits, along with an additional 8 bits for error correction code (ECC). This synchronous memory device can reach a maximum transfer rate of up to 2400 MT/s (DDR4-2400), delivering a total data bandwidth of 153.6 Gbps. It is designed to support key DDR4 SDRAM features, including posted CAS with programmable additive latency, On-Die Termination (ODT), programmable driver strength for data signals, and operates at a clock frequency of 1200 MHz.
The control and address inputs are synchronized using a pair of externally supplied differential clocks, with inputs being latched at the transition point of CK_t rising and CK_c falling. All input/output operations are synchronized with bidirectional differential data strobes (DQS_t and DQS_c) in a source-synchronous manner. The address bus handles row, column, and bank address information through RAS_n and CAS_n multiplexing. Additionally, Data Bus Inversion (DBI) is employed to reduce power consumption and minimize ground bounce.
The device requires two power supplies: 1.2V for VDD and VDDQ, and 2.5V for the VPP wordline supply. This DDR4 SDRAM is suitable for high-density memory applications that demand high-speed data transfer capabilities.
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If you have a specific question about the 64Gbit x72bit DDR4 memory module or have a specific request for one of your projects, we will be happy to provide you with a suitable solution.
