MNEMOSYNE for critical components with Radhard memory for space applications.
Mnemosyne, in Greek mythology, is the personification of memory. She is one of the Titans, daughter of Uranus (Sky) and Gaia (Earth). Mnemosyne played a crucial role in the lives of the gods, as she was the mother of the nine Muses, who inspired art and science. Her name is derived from the Greek word "mnēmē," meaning memory, symbolizing her power to preserve knowledge and wisdom across generations. Integrating her legacy with Mnemosyne memory technology highlights the enduring importance of reliability and information retention in space applications.
MNEMOSYNE - First Design ( Test vehicle ASIC)
MNEMOSYNE is a new non-volatile Radhard memory developed as part of a European project. The ASIC embedded in our module is manufactured in Europe using a 22 nm FDSOI process. This new portfolio of non-volatile memories features a serial or parallel interface, embedded ECC and counters. With memory densities from 128 Mbit to 1 Gbit, MNEMOSYNE modules are compatible with the latest generation of FPGAs and processors.
The MNEMOSYNE project, backed by the European Union's Horizon 2020 program, aims to create a European-independent, radiation-hardened, high-density non-volatile memory for space applications. Led by 3D PLUS, this initiative brings together top experts in radiation effects and space electronics from institutions such as IMEC, Padova University, TRAD, NanoXplore, and Beyond Gravity. This collaborative effort has resulted in a memory solution setting new standards in the space industry.
European Union's Horizon 2020 program
Develop a European-independent, radiation-hardened, high-density non-volatile memory for space
3D PLUS, including IMEC, Padova University, TRAD, NanoXplore, and Beyond Gravity
3DMN512M08US4853 or 3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit non-volatile memory with a serial interface.
The 512 Mbit /1 Gbit memory module seemingly replaces any SPI NOR flash memory by providing a high-speed, low pin count SPI-compatible bus interface with a single 1.8 V power supply. It delivers up to 200 MBps reads and writes over 8 I/O signals at a clock frequency of 100 MHz.
This native latch-up immunized memory, manufactured using an FDSOI process, is radiation tolerant by design. Additional protection against transient effects is provided by an embedded controller with ECC.
In addition, an ECC flag and error counter are provided to assist the user in their error management strategy. These features are helpful in extending the life of the module in the radiation environment.
If you would like general information about the new radhard memory MNEMOSYNE, please contact our team directly or arrange a callback.
If you have a specific question about the new Radhard storage MNEMOSYNE or an inquiry for one of your projects, we will be happy to provide you with a suitable solution for you and your project.
