4 Gbit (512Mbit x 8) Industrial DDR3 SDRAM (3D3D4G08WB1473)

The 3D3D4G08WB1473 is a high speed stack integrating 4Gbits DDR3 SDRAM and fabricated with ultra high performance CMOS process containing 4G bits which is organized as 64Mbits x 8 banks by 8 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.

All the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a RAS# and CAS# multiplexing style.