FBS-GAM02-P-R50

Category: GaN High Reliability Discrete Brand: Freebird Semiconductor

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50V/10A Fully Derated (100V/10A Capable)
Integrated Output eGaN® Power HEMTs
Four Possible Configurations:
– Single Low Side Driver
– Single High Side Driver
– Independent High and Low Side Drivers
– Half-Bridge with Input Shoot-Through Protection
Internal Shoot-Through Protection
Internal Power Good Circuitry
High Speed Switching Capability: 1.0MHz+
Rugged Compact Molded SMT Package
“Pillar” I/O Pads
eGaN® HEMT Switching Elements
Rad-Hard/Commercially Screened
Guaranteed Total Ionizing Dose:
– Rated to 100kRad
Single Event:
– SEE immunity for LET of ~83.7 MeV/mg/cm2
With VDS up to 100% of rated Breakdown
Neutron Fluence:
– Maintains specification up to 1 x 1013 N/cm2

Description:

Freebird Semiconductors FBS-GAM02-P-R50 Series Radiation Hardened Multifunction Power Module incorporates eGaN® switching power HEMTs with intended end use design within commercial satellite space environments. These modules include two output power switches, two high speed gate drive circuits (consisting entirely of eGaN® switching elements), two power Schottky diode clamp elements with shoot-through prevention logic (for the Half-Bridge connection) and a +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. Data sheet parameters are “Post Radiation Effect” guaranteed due to the utilization of Freebird Semiconductor RHA validated materials.

Commerce Rated 9A515.e.x Device

Applications: