FBG20N04A

Rad Hard e-GaN® 200V,4A,102mΩ Surface Mount (FSMD-A)

Categories: GaN High Reliability Discrete, RAD HARD

Features
Specifications

Features

Low RDS(ON)
Ultra-low Qg for High Efficiency
Logic Level
Light Weight
New Compact Hermetic Package
Source Sense Pin
Total Dose
- Rated to 300kRrad
Single Event
- SEE immunity for LET of 83.7MeV/mg/cm2
  With VDS up to 100% of rated Breakdown
Low Dose Rate at 100 mRad/sec
- Maintains Pre-Rad specification
Neutron
- Maintains Pre-Rad specification for up to 1 x 10^13 Neutrons/cm^2

Application

Commercial Satellite EPS & Avionics
Deep Space Probes
High Speed Rad Hard DC-DC Conversion
Rad Hard Motor Controllers

Description

Freebird Semiconductor FSMD-A series of eGaN® switching power HEMTs have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(ON) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times.

These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging.

Datasheet

FBG20N04A

Categories: GaN High Reliability Discrete, RAD HARD

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Features
Specifications

Features

Low RDS(ON)
Ultra-low Qg for High Efficiency
Logic Level
Light Weight
New Compact Hermetic Package
Source Sense Pin
Total Dose
- Rated to 300kRrad
Single Event
- SEE immunity for LET of 83.7MeV/mg/cm2
  With VDS up to 100% of rated Breakdown
Low Dose Rate at 100 mRad/sec
- Maintains Pre-Rad specification
Neutron
- Maintains Pre-Rad specification for up to 1 x 10^13 Neutrons/cm^2