FBS-GAM02P-C-PSE

Category: GaN High Reliability Discrete Brand: Freebird Semiconductor

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50V Fully De-Rated Operation internally utilizing 100V Rated eGaN® HEMT technology
Independent Low and High Side eGaN® HEMT Gate Drivers
Four Possible Configurations:
Single Low Side Gate Driver
Single High Side Gate Driver
Independent High and Low Side Gate Drivers
Half-Bridge Gate Drivers With Shoot
Through Protection
Internal Shoot-Through Protection
Internal Power Good Circuitry
High Speed Switching Capability:1.0+MHz
Rugged Compact Molded SMT Package
“Pillar” I/O Pads
Drives External eGaN® Switching Elements
No Bipolar Technology
Commercially Screened

Development Vehicle for:

FBS-GAM02P-R-PSE
FBS-GAM02C-R-PSE

Description:

Freebird Semiconductor’s FBS-GAM02P-C-PSE Series Radiation Tolerant High Speed Multifunction Power HEMT Gate Driver Module incorporates eGaN® HEMTs with intended end use design within commercial satellite space environments. These development modules contain two independent high speed gate drive circuits (consisting entirely of eGaN ® switching elements), shoot-through prevention logic (for a Half-Bridge configuration) and +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. The FBS-GAM02P-C-PSE is intended to drive external Freebird eGaN ® HEMT power switch transistors rated up to 100V (refer to Table

1, Page 11 for device options).

Applications: