MNEMOSYNE - 128 Mb 3.3 V parallel (3DMN128M08VS1852)

Key Features

Performances

  • Density: 128 Mbit
  • Supply: 1.8 V (core) and 3.3 V (I/O)
  • EEPROM protocol
  • On chip latches: address, data, CE_N, OE_N, WE_N
  • Access time: 250 ns (max)
  • 100,000 P/E cycles
  • 20 years data retention
  • Hardware reset pin
  • Temperature range: -55°C to +125°C
  • ITAR free

Space Qualifications

  • Up to ESA Class 1,
  • Up to NASA Level 1,
  • High Longevity and Reliability,
  • Flight heritage: 3D PLUS expertise in space memories for more than 20 years

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Radiation Tolerance

  • TID > 100 krad(Si)
  • SEL LET > 80 MeV.cm²/mg
  • SEU LET > 60 MeV.cm²/mg
  • SET LET > 60 MeV.cm²/mg
  • SEFI LET > 60 MeV.cm²/mg
  • The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Description

3DMN128M08VS1852 is a high performance 128 Mbit Non-Volatile Memory with parallel interface operating at 3.3 V.

Application

  • FPGA configuration memory
  • Processors boot/program memory

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

More information

Downloads

Manufacturer Info

MNEMOSYNE - 128 Mb 3.3 V parallel (3DMN128M08VS1852)

3DMN128M08VS1852 is a high performance 128 Mbit Non-Volatile Memory with parallel interface operating at 3.3 V.

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It is organized as a single bank of 16,777,216 words of 8 bits selectable with CE_N signal. This native latch-up immune memory built on a FDSOI process, is radiation hardened by design. Additional protection against transient effects is provided by an embedded controller with ECC.

The module package in a SOP 54 is available in a wide temperature range and various screening options up to space grade.

Key Features

Performances

  • Density: 128 Mbit
  • Supply: 1.8 V (core) and 3.3 V (I/O)
  • EEPROM protocol
  • On chip latches: address, data, CE_N, OE_N, WE_N
  • Access time: 250 ns (max)
  • 100,000 P/E cycles
  • 20 years data retention
  • Hardware reset pin
  • Temperature range: -55°C to +125°C
  • ITAR free

Space Qualifications

  • Up to ESA Class 1,
  • Up to NASA Level 1,
  • High Longevity and Reliability,
  • Flight heritage: 3D PLUS expertise in space memories for more than 20 years

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Radiation Tolerance

  • TID > 100 krad(Si)
  • SEL LET > 80 MeV.cm²/mg
  • SEU LET > 60 MeV.cm²/mg
  • SET LET > 60 MeV.cm²/mg
  • SEFI LET > 60 MeV.cm²/mg
  • The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Description

3DMN128M08VS1852 is a high performance 128 Mbit Non-Volatile Memory with parallel interface operating at 3.3 V.

Application

  • FPGA configuration memory
  • Processors boot/program memory

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

More information

Downloads

Manufacturer Info

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MSA Components GmbH
Am Glockenberg 13
57439 Attendorn
Germany
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