24 Gbit NAND Flash Radiation Tolerant Intelligent Memory Stack (3DSS24G08VS3626)

Beschreibung

The RTIMS embeds three non-volatile NAND Flash memories and one intelligent Flash Memory Controller (FMC). All of the basic devices embedded in the RTIMS are SEL immune. Protection against high-current SEFIs is provided by current detection and power-switch electronics controlled by the FMC. The FMC also provides the module with full protection against SEUs through either Error Detection and Correction (EDAC) or Triple Modular Redundancy (TMR). SEU protection can be configured to use EDAC, TMR, or be disabled entirely. The effective RTIMS Flash density is:

• 8 Gbit with TMR protection
• 16 Gbit with EDAC protection
• 24 Gbit with SEU protection disabled

The 3DSS24G08VS3626 provides continuous logical sectors (no bad blocks) and includes high-value embedded features such as wear leveling, memory self-test, and internal telemetry registers. Key features include:

• Error-free guaranteed Sector 0 for boot data storage
• Continuous logical sectors with embedded bad-block management
• Embedded dynamic wear-leveling function
• Embedded format, failed-block retrieval, and logical sector generation commands for initialization
• Internal registers for configuration, operational status, and telemetry information

All of these functions are fully configurable through hardware configuration pins and a powerful User Interface Port (UIP).

Thanks to its standard NAND Flash interface, the 3DSS24G08VS3626 can be easily connected to existing microprocessors or FPGAs with an embedded NAND Flash interface. Its integrated high-level functions also enable it to operate as a standalone local data recorder for compact data-logging applications.