The 512 Mbit /1 Gbit memory module seemingly replaces any SPI NOR Flash memory by featuring a high-speed, low pin count SPI compatible bus interface with a single 1.8 V power supply. It delivers up to 100 MBps reads and writes through 8 I/O signals with a clock frequency of 100 MHz.
This native latch-up immune memory built on a FDSOI process, is radiation hardened by design. Additional protection against transient effects is provided by an embedded controller with ECC.
In addition, an ECC flag and an error counter are present to help user with its error management strategy. These features are helpful to extend the lifetime of the module in radiation environment.
3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit Non-Volatile Memory with a serial interface.
