MNEMOSYNE - 512 Mb 1.8 V SPI (3DMN512M08US4853)

Key Features

Performances

  • Density: 512 Mbit or 1 Gbit
  • Up to 100 MHz
  • 1.8 V SPI interface
  • SPI, dual SPI, QSPI and OSPI modesupported.
  • Embedded ECC
  • ECC flag, error counter
  • 100,000 P/E cycles
  • 20 years data retention
  • Software reset and hardware reset pin
  • Boot configuration: x1, x4, x8
  • Temperature range: -55°C to +125°C
  • ITAR free

Space Qualifications

  • Up to ESA Class 1,
  • Up to NASA Level 1,
  • High Longevity and Reliability,
  • Flight heritage: 3D PLUS expertise

Radiation Tolerance

  • TID > 100 krad(Si)
  • SEL LET > 60MeV.cm²/mg
  • SEU LET > 60 MeV.cm²/mg
  • SET LET > 60 MeV.cm²/mg
  • SEFI LET > 60 MeV.cm²/mg

Description

3DMN512M08US4853 or 3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit Non-Volatile Memory with a serial interface.

Applications

  • FPGA configuration memory
  • Processors boot/program memory

More information

Downloads

Manufacturer Info

MNEMOSYNE - 512 Mb 1.8 V SPI (3DMN512M08US4853)

3DMN512M08US4853 or 3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit Non-Volatile Memory with a serial interface.

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The 512 Mbit /1 Gbit memory module seemingly replaces any SPI NOR Flash memory by featuring a high-speed, low pin count SPI compatible bus interface with a single 1.8 V power supply. It delivers up to 100 MBps reads and writes through 8 I/O signals with a clock frequency of 100 MHz.

This native latch-up immune memory, built on a FDSOI process, is radiation hardened by design. Additional protection against transient effects is provided by an embedded controller with ECC.

In addition, an ECC flag and an error counter are present to help the user with its error management strategy. These features are helpful to extend the lifetime of the module in radiation environment.

Key Features

Performances

  • Density: 512 Mbit or 1 Gbit
  • Up to 100 MHz
  • 1.8 V SPI interface
  • SPI, dual SPI, QSPI and OSPI modesupported.
  • Embedded ECC
  • ECC flag, error counter
  • 100,000 P/E cycles
  • 20 years data retention
  • Software reset and hardware reset pin
  • Boot configuration: x1, x4, x8
  • Temperature range: -55°C to +125°C
  • ITAR free

Space Qualifications

  • Up to ESA Class 1,
  • Up to NASA Level 1,
  • High Longevity and Reliability,
  • Flight heritage: 3D PLUS expertise

Radiation Tolerance

  • TID > 100 krad(Si)
  • SEL LET > 60MeV.cm²/mg
  • SEU LET > 60 MeV.cm²/mg
  • SET LET > 60 MeV.cm²/mg
  • SEFI LET > 60 MeV.cm²/mg

Description

3DMN512M08US4853 or 3DMN1G08US8854 is a high performance 512 Mbit or 1 Gbit Non-Volatile Memory with a serial interface.

Applications

  • FPGA configuration memory
  • Processors boot/program memory

More information

Downloads

Manufacturer Info

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MSA Components GmbH
Am Glockenberg 13
57439 Attendorn
Germany
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