The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarization rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being nonvolatile like a Flash.
The 3DMR10M40VS5688 is a high–speed, highly integrated 10 Mbit MRAM, organized with two banks of 5 Mbit. Each bank has a 40-bit interface and can be accessed by activating the associated control signals: WEn#, OEn# and CEn# (n from 0 to 1).
This MRAM is a cost-effective solution for processor’s boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space missions, navigation, launchers and manned vehicles, etc.
The module packaged in a SOP 96 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.
SPACE TECH EXPO EUROPE 2026
Discuss your project in person with our sales team, from component selection to design-in. We will set aside 30 minutes for you.
SPACE TECH EXPO EUROPE
Besprechen Sie Ihr Projekt persönlich mit unserem Vertriebsteam, von Bauteilauswahl bis Design-in. Wir nehmen uns 30 Minuten Zeit.