The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarization rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being nonvolatile like a Flash.
The 3DMR10M40VS5688 is a high–speed, highly integrated 10 Mbit MRAM, organized with two banks of 5 Mbit. Each bank has a 40-bit interface and can be accessed by activating the associated control signals: WEn#, OEn# and CEn# (n from 0 to 1).
This MRAM is a cost-effective solution for processor’s boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space missions, navigation, launchers and manned vehicles, etc.
The module packaged in a SOP 96 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.
