The 3DFN16G08VS2705 is a high-density non-volatile NANO Flash memory is organized as 2G x 8. Each device of the module is a 8 Gbit NANO Flash organized as 1G x 8 bits, that can be accessed by activating the associated control signals: #CEn, #WEn, #REn, #RBn (n = 0, 1).
Using high performance and high reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory module provides an area efficient solution for high capacity data storage needs.
Radtiation Tolerance
3DFN32G08US2845 modules provide a fully qualified memory solution. Packaged in SOP 54, they are available in Commercial, Industrial or Military temperature ranges and in all quality level
Applications
Space Qualification
