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128 Gbit NAND Flash – 16-bit bus width,based on 2 G x 8 (3DFN128G16VS8709 )

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The 3DFN128G16VS8709 is a high-density non-volatile NANO Flash memory is organized as BG x 16. Each device of the module is a 16 Gbit (with spare 256 Mbit) NANO Flash, organized as 2G x 8 bits that can be accessed by activating the associated control signals: CEn#, WEi/1-, #RE,#, RIB;#, CLE;, ALE; (n from 0 to 7, and i from 0 to 1)

Using high performance and reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory provides an area efficient solution for high capacity data storage needs.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • ONFI 2.1 compliant
  • Memory Cell Array: 4 × (2G × 8 bits) × 2
  • Automatic Program and Erase

    • Page size × 8 bit Program: (4K + 224) Byte/Bank
    • Block Size: (512K + 28K) Byte/Bank
  • Single voltage operation: 3.3 V
  • Page Read performance

    • Random READ: 25 µs (Max)
    • Serial Access: 25 ns (Min)
  • Fast Write cycle time

    • Page Program Time: 230 µs (Typ)
    • Block Erase Time: 700 µs (Typ)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection

    • Program/Erase Lockout during Power Transitions
  • Endurance: 100k Program/Erase Cycles with ECC
  • Data Retention: 10 Years
  • Command Driven Operation
  • Intelligent Copy-Back Operation
  • Available with screening options up to grade S
  • ITAR free

Description

The module packaged in a SOP 50 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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