The 3DFO2G08VS4215 is a 3.0V single power 2Gbit Flash memory organized as 268.435.456 bytes.
It is organized in 4 banks with separate chip enable (#CE) controls. It requires only a single 3.0 volt power supply for both read and write functions. In addition to Vee input, a high-voltage accelerated program(#WP/ACC) input provides shorter programming limes through increased current.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors.
The Enhanced control allows the host system to set the voltage levels that the device generates and tolerates on all input levels (address, chip control, and DQ input levels) to the same voltage level that is asserted on the VI0 pin. This allows the device to operate in a 1.8V or 3V system environment as required. Hardware data protection measures include a low Vee detector that automatically inhibits write operations during power transistions. Persistent Sector Protection provides in-system, command-enable protection of any combination of sectors using a single power supply at Vee. Password Sector Protection prevents unauthorized write and erase operations in any combination of sectors through a user-defined 64-bit password.
The 3DFO2G08VS4215 is packaged in a 60 pin SOP and is available in commercial, Industrial or Military temperature range.
