4 Mbit (8-bit bus width) EEPROM Memory Module (3DEE4M08VS4145)

• Memory Cell Array: 4 x (128K x 8 bits)
• 3.3 V single power supply
• Access time: 250 ns (Max)
• Power dissipation
  • Active: 20 mW/Hz (Typ)
  • Standby: < 400 µW (Max)
• On-chip latches: address, data, #CEn, #OE, #WE
• Single voltage operation: 3.3 V
• Automatic byte write: 15 ms (Max)
• Automatic page write (128 bytes): 15 ms (Max)
• Command/Address/Data Multiplexed I/O Port
• Data polling and RDY/#BUSY
• Endurance: 10K Program/Erase Cycles with ECC
• Data retention: 10 years
• Software data protection
• Write protection by #RES pin
• Available temperature range
  • 0°C to +70°C
  • -40°C to +85°C
  • -55°C to +125°C
• Available with screening options up to Grade S, ITAR-free

Description

The module packaged in a SOP 40 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

Downloads

• 3D Plus Memory Module P/N Decoder

Manufacturer Info

• www.3d-plus.com