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24 Gbit NAND Flash Radiation Tolerant Intelligent Memory Stack (3DSS24G08VS3626)

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The NAND Flash Radiation Tolerant and Intelligent Memory Stack (RTIMS FLASH) is a user-friendly, plug-and-play, radiation-protected, high-density NAND Flash memory solution. It provides a high-capacity, radiation-hardened-by-design (RHBD), non-volatile memory module designed for demanding space applications, including geostationary satellites, Earth observation, navigation systems, crewed space vehicles, and deep-spacescientific missions.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Single 3.3 V power supply
  • Up to 24 Gbit of space-qualified NAND Flash memory

    • 8 Gbit with TMR memory protection
    • 16 Gbit with EDAC memory protection
    • 24 Gbit with no additional memory protection
  • SLC memory technology
  • Bad-block-free continuous logical sectors
  • 100K program/erase cycle endurance
  • 10-year data retention
  • Standard 8-bit NAND Flash interface
  • Access speeds

    • Write: up to 99 Mbit/s
    • Read: up to 287 Mbit/s
  • Operating temperature range: -40°C to +85°C
  • Radiation-hardened design

    • Total Ionizing Dose (TID): > 50 krad(Si)
    • Single Event Latch-up (SEL) immune: > 80 MeV·cm²/mg
    • Single Event Upset (SEU) immune by design
    • High-Current Single Event Functional Interrupt (HC SEFI) immune by design
  • ITAR-free product with worldwide delivery
  • Space-qualified technology
  • 38-pin SOP package with 1.27 mm pitch
  • Dimensions: 31 × 28 × 11.2 mm
  • Mass: 17 g

Description

The RTIMS embeds three non-volatile NAND Flash memories and one intelligent Flash Memory Controller (FMC). All of the basic devices embedded in the RTIMS are SEL immune. Protection against high-current SEFIs is provided by current detection and power-switch electronics controlled by the FMC. The FMC also provides the module with full protection against SEUs through either Error Detection and Correction (EDAC) or Triple Modular Redundancy (TMR). SEU protection can be configured to use EDAC, TMR, or be disabled entirely. The effective RTIMS Flash density is:

  • 8 Gbit with TMR protection
  • 16 Gbit with EDAC protection
  • 24 Gbit with SEU protection disabled

The 3DSS24G08VS3626 provides continuous logical sectors (no bad blocks) and includes high-value embedded features such as wear leveling, memory self-test, and internal telemetry registers. Key features include:

  • Error-free guaranteed Sector 0 for boot data storage
  • Continuous logical sectors with embedded bad-block management
  • Embedded dynamic wear-leveling function
  • Embedded format, failed-block retrieval, and logical sector generation commands for initialization
  • Internal registers for configuration, operational status, and telemetry information

All of these functions are fully configurable through hardware configuration pins and a powerful User Interface Port (UIP).

Thanks to its standard NAND Flash interface, the 3DSS24G08VS3626 can be easily connected to existing microprocessors or FPGAs with an embedded NAND Flash interface. Its integrated high-level functions also enable it to operate as a standalone local data recorder for compact data-logging applications.

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