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2 Gbit NOR Flash – 6-bit bus width, based on 32M x 16 (3DFO2G16VS4214)

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The 3DFO2G16VS4214 is a 3.0 V single power 2 Gbit Flash memory. The device has a 16-bit wide data bus that can also function as an B-bit wide data bus by using the input #BYTE.

The memory is organized in 4 banks with separate chip enable (#CE) controls. In addition to Vee input, a high-voltage accelerated program (#WP/ACC) input provides shorter programming times through increased current.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Single Power supply: 3.0 V for all operations
  • All input levels (address, control, DQ) and output are determined by VIO = VEE
  • Endurance: 100k Program/Erase Cycles per sector
  • Data Retention: 20 Years
  • High Performance

    • 100 ns access time
    • 8-word/16-byte page read buffer
    • 25 ns page read time
    • 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
  • Advanced sector protection
  • #WP/ACC input accelerates programming time
  • Hardware reset input
  • Ready/#Busy pin

Description

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors.

Hardware data protection measures include a low Vee detector that automatically inhibits write operations during power transitions. Persistent Sector Protection provides in­system, command-enable protection of any combination of sectors using a single power supply at Vee- Password Sector Protection prevents unauthorized write and erase operations in any combination of sectors through a user-defined 64-bit password

The module packaged in a SOP 60 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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