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2 Gbit SDRAM (3DSD2G64VB4488)

SKU: 93edf5d812f1 Categories: , Brand:
The 3DSD2G64VB4488 is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2.147.483.648 bits. It is organized with 4 banks of 512 Mbit. Each bank has a 16-bit interface and is selected with specific #CS, CLK and CKE. All other signals are common to the four 512Mbit SDRAM memories. It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.
Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Stack of four 512 Mbit SDRAM devices.
  • Organized as 32M × 64-bit.
  • Single +3.3 V power supply.
  • Fully synchronous; all signals registered on the positive edge of the system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Programmable burst lengths:

    • 1
    • 2
    • 4
    • 8
    • Full page
  • Auto Precharge, including Concurrent Auto Precharge and Auto Refresh modes.
  • LVTTL-compatible inputs and outputs.
  • Available temperature ranges:

    • 0°C to +70°C
    • -40°C to +85°C
    • -40°C to +105°C (specific option)
  • Available with screening option for high-reliability applications (space, etc.).

Description

The 3DSD2G64VB4488 is packaged in a 119 ball BGA.

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