The Magneto-resistive Random Access Memory (MRAM) uses magnetic polarization rather than electric charges to store data bits. Therefore, the MRAM acts like a SRAM (rapid data buffers) while being nonvolatile like a Flash.
The 3DMR2M16VS2427 is a high–speed, highly integrated 2 Mbit MRAM, organized with two banks of 1 Mbit. It has an 16-bit interface and can be accessed by activating the associated control signals: #WE, #OE, #CE0 and #CE1.
This MRAM is a cost-effective solution for processor’s boot, program ROM and FPGA configuration memory. It can be used in variety of space applications such as: sciences and deep space issions, navigation, launchers and manned vehicles, etc. ...
The module packaged in a SOP 54 is available for Commercial, Industrial or Specific temperature range. It is also available with screening options up to space grade level.
