20 Mbit SRAM (3DSR20M40VS2708)

The 3DSR20M40VS2708 is a high-speed highly integrated Static Random Access Memory containing 20, 971, 520 bit. It is organized as two 256 x 40bit banks, each bank has 2 group of chip select signals #CS and #WE to control the 32bit and 8bit independently. The 3DSR20M40VS2708 uses 40 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is manufactured using 3D PLUS well known MCM-V patented technology designed for high speed circuit applications. It is particularity well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.