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2Gbit DDR2 SDRAM (3D2D2G08US2662)

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Each bank has an 8-bit interface and is selected with specific #CS, CKE, #CK, CK and ODT. All other signals are common to the 2x 1 Gbit DDR2 SD RAM memories. It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or work­station.
The 3D2D2G08US2662 is packaged in a 74 pin SOP.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Organized as 256M × 8-bit based on two 1 Gbit DDR2 SDRAM.
  • Power supply: +1.8 V ± 0.1 V.
  • SSTL_18 interface.
  • Burst read/write operation and burst read/single write operation capability.
  • Burst length (BL):

    • 4
    • 8
  • Burst type (BT):

    • Sequential (BL = 4, 8)
    • Interleave (BL = 4, 8)
  • Programmable CAS Latency (CL):

    • 3
    • 4
    • 5
  • Auto precharge option for each burst access.
  • Refresh cycles: 8192 refresh cycles / 64 ms.
  • Refresh modes:

    • Auto refresh
    • Self refresh
  • Available temperature range:

    • 0°C to +85°C
    • -40°C to +105°C
  • Available with screening option for high reliability applications (Space, etc.).
  • Frequency: up to 333 MHz.

Description

The 3D2D2G08US2662 is a high-speed highly integrat­ed DDR2 Synchronous Dynamic Random Access Memory containing 2.147.483.648 bits.

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