The 3D3D4G16WB1627 is a high speed stack integrating 4Gbits DDR3 SDRAM and fabricated with ultra high performance CMOS process containing 4Gbits which is organized as 32Mb x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1333 b/sec/pin (DDR3-1333) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.
All the control and address inputs are synchronized with a pair of externally supplied differential clocks.Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a RAS# and CAS# multiplexing style.
The 4Gb DDR3 devices operates with a single power supply: 1.5V VDD and VDDQ.
This device is ideal for high density memory applications that require high speed transfer and compatibility with standard servers and networking equipment.
Applications:
