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4 Gbit SDRAM (3DSD4G16VS8483)

SKU: 840bdc56791b Categories: , Brand:
The 3DSD4G16VS8483 is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 4.294.967.296 bits. It is organized as eight banks of 512 Mbit. Each bank has a 16-bit interface and is selected with specific #CS. All other signals are common to the eight 512 Mbit SDRAM memories. Each memory in the bank is organized as 32M x16-bit. It is particularity well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.
Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Stack of eight 512 Mbit SDRAM.
  • Organized as 256M x16-bit.
  • Single +3.3V power supply.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Programmable burst length; 1, 2, 4, 8 or full page.
  • Auto precharge includes concurrent auto precharge, and auto refresh modes.
  • Self refresh modes.
  • LVTTL-compatible inputs and outputs.
  • Available Temperature Range:
    • 0°C to +70°C
    • -40°C to +85°C
    • -40°C to +105°C
  • Available with screening option for high reliability applications (Space, etc…).

Description

The 3DSD4G16VS8483 is packaged in a 62 pin SOP.

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