4 TB High Density NAND FLASH 3DFN4T16LB1862

4 Tbit TLC/1.33 Tbit SLC NAND Flash (3DFN4T16LB1862)

Name: 4 Tbit TLC/1.33 Tbit SLC NAND Flash (3DFN4T16LB1862) | MSA Components GmbH
SKU: 9eec089e2a7f

SKU: 9eec089e2a7f Categories: RAD HARD / RAD TOLERANT, Memories, FLASH NAND Brand: 3D Plus

The 3DFN4T16LB1862 is 4 Tbit density NAND Flash memory based on TLC memory. In p-SLC mode, it’s a 1.33 Tbit NAND Flash. It can be accessed by 16 bits bidirectional data inputs/outputs, with four control signals. This organization is compliant with ONFI 4.2.

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Markus Schulte, M.Sc.

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+49 2722 6373 20 markus.schulte@msa-components.com

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ONFI 4.2 compliant
JEDEC NAND Flash Interoperability (JESD230D) compliant
Triple-level cell (TLC) supporting p-SLC mode
Page size x8: 18,352 bytes (16,384 + 1,968 bytes)
Block size: 2,112 pages (33,792K + 4,059K bytes)
Plane size: 4 planes × 556 blocks
NV-DDR3 I/O performance
- Up to NV-DDR3 timing mode 12
- Clock rate: 1.67 ns (NV-DDR3)
- Read/write throughput per pin: 1.6 GT/s
SLC array performance
- Read page operation time: 40 μs (TYP)
- Program page time: 170 μs (TYP)
- Erase block time: 8 ms (TYP)
Dual operating voltage supply
- VCC: 2.35 to 3.6 V
- VCCQ: 1.14 to 1.26 V
Data must be randomized by the external host before being input to the NAND device
On-die termination (ODT) supported
Endurance: 60,000 P/E cycles in p-SLC mode
Operating temperature: -40 °C to +85 °C

Radiation Data in P-SLC Mode

SEL LETTH: > 62.5 MeV·cm²/mg
HCE LETTH: ≤ 32.4 MeV·cm²/mg
SEFF LETTH: > 45.8 and ≤ 55 MeV·cm²/mg
SEU LETTH: ≤ 1.5 MeV·cm²/mg
SEFI LETTH: ≤ 1.5 MeV·cm²/mg
Total Ionizing Dose (TID): > 25–30 krad(Si)*

*: TBC

Description

The use of the p-SLC mode combined with 3D PLUS stacking technology, provides a Flash memory with an area efficient solution for ultra-high-density storage and high-speed data transfer needs. It is packaged in a 215 BGA.

Downloads

3D Plus Memory Module P/N Decoder

Manufacturer Info

www.3d-plus.com

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