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4GBit DDR2 SDRAM (3D2D4G08US4661)

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Each bank has 8-bit interface and is selected with specific #CS, CKE, #CK and CK. All other signals are common to the four 1 Gbit DDR2 SDRAM memories.
It is particularly well suited for use in high reliability, high per­formance and high density system applications, such as solid state mass recorder, server or workstation.
The 3D2D4G08US4661 is packaged in a 74 pin SOP.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • Organized as 512M × 8-bit based on four 1 Gbit DDR2 SDRAM.
  • Power supply: +1.8 V ± 0.1 V.
  • SSTL_18 interface.
  • Burst read/write operation and burst read/single write operation capability.
  • Burst length (BL):

    • 4
    • 8
  • Burst type (BT):

    • Sequential (BL = 4, 8)
    • Interleave (BL = 4, 8)
  • Programmable CAS Latency (CL):

    • 3
    • 4
    • 5
  • Auto precharge option for each burst access.
  • Refresh cycles: 8192 refresh cycles / 64 ms.
  • Refresh modes:

    • Auto refresh
    • Self refresh
  • Available temperature range:

    • 0°C to +70°C
    • -40°C to +85°C
  • Available with screening option for high reliability applications (Space, etc.).

Description

The 3D2D4G08US4661 is a high-speed highly integrated DDR2 Synchronous Dynamic Random Access Memory con­taining 4.294.967.296 bits.

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