The 3DFN64G16VS8710 is a high-density non-volatile NANO Flash memory is organized as 4G x 16. Each device of the module is a 8 Gbit NANO Flash, organized as 1G x 8 bits that can be accessed by activating the associated control signals: #CEn, #WEn, #REn, #RBn (n from 0 to 7).
Using high performance and reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory provides an area efficient solution for high capacity data storage needs.
The module packaged in a SOP 58 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.
PERSONAL CONSULTATION
From component selection to design-in: our sales team advises you in person, by phone, video call or on site. We will set aside 30 minutes for you.
PERSÖNLICHE BERATUNG
Von der Bauteilauswahl bis zum Design-in: Unser Vertriebsteam berät Sie persönlich, telefonisch, per Videokonferenz oder vor Ort. Wir nehmen uns 30 Minuten Zeit.