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8 Gbit NAND Flash – 8-bit bus width, based on 1 G x 8 (3DFN8G08VS1706)

SKU: 75db50438ee9 Categories: , , Brand:

The 3DFN8G08VS1706 is a high-density non-volatile NANO Flash memory is organized as 1 G x 8. The module can be accessed by activating the associated control signals: #CE, #WE, #RE, #RB.

Using high performance and high reliability CMOS technology combined with 3D PLUS patented stacking technology, this FLASH memory module provides an area efficient solution for high capacity data storage needs.

Fabio Asti

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Fabio Asti
Business Developement Manager
+39 342 198 3878 fabio.asti@steliau.it
  • ONFI 2.1 compliant
  • Memory Cell Array: 1 G × 8 bits
  • Automatic Program and Erase

    • Page Size (×8-bit Program): (4K + 224) Bytes/Bank
    • Block Size: (512K + 28K) Bytes/Bank
  • Single-voltage operation: 3.3 V
  • Page Read Performance

    • Random Read: 25 µs (Max)
    • Serial Access: 25 ns (Min)
  • Fast Write Cycle Time

    • Page Program Time: 230 µs (Typ)
    • Block Erase Time: 700 µs (Typ)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection

    • Program/Erase Lockout during Power Transitions
  • Endurance: 100k Program/Erase Cycles with ECC
  • Data Retention: 10 Years
  • Command-Driven Operation
  • Intelligent Copy-Back Operation
  • Available with screening options up to Grade S
  • ITAR Free

Description

The module packaged in a SOP 50 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.

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