MNEMOSYNE – 128 Mb 3.3 V parallel (3DMN128M08VS1852)

Key Features

Performances

• Density: 128 Mbit
• Supply: 1.8 V (core) and 3.3 V (I/O)
• EEPROM protocol
• On chip latches: address, data, CE_N, OE_N, WE_N
• Access time: 250 ns (max)
• 100,000 P/E cycles
• 20 years data retention
• Hardware reset pin
• Temperature range: -55°C to +125°C
• ITAR free

Space Qualifications

• Up to ESA Class 1,
• Up to NASA Level 1,
• High Longevity and Reliability,
• Flight heritage: 3D PLUS expertise in space memories for more than 20 years

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Radiation Tolerance

• TID > 100 krad(Si)
• SEL LET > 80 MeV.cm²/mg
• SEU LET > 60 MeV.cm²/mg
• SET LET > 60 MeV.cm²/mg
• SEFI LET > 60 MeV.cm²/mg

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

Description

3DMN128M08VS1852 is a high performance 128 Mbit Non-Volatile Memory with parallel interface operating at 3.3 V.

Application

• FPGA configuration memory
• Processors boot/program memory

The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.

More information

• MNEMOSYNE — Radhard Memory for Space

Downloads

• 3D Plus Memory Module P/N Decoder

Manufacturer Info

• www.3d-plus.com