6 Gbit DDR2 SDRAM (3D2D6G48UB3687)

Categories: Memories, DDR, SDRAM Brand: 3D Plus

The 8-bit interface and is selected with specific #CS, CKE, #CK and CK.

Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality.

It is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.
The 3D2D1G08US1285 is packaged in a 74 pin SOP.

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Fabio Asti

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Organized as 128M × 48.
Supply voltage: 1.8 V ± 0.1 V.
JEDEC standard 1.8 V I/O (SSTL_18 compatible).
Maximum data rate: 333 MHz.
Differential data strobe per byte.
4n-bit prefetch architecture.
DLL to align DQ and DQS transitions with CK.
6 internal banks per die for concurrent operation.
Programmable CAS Latency.
Posted CAS Additive Latency.
Write Latency = Read Latency − 1 tCK.
Programmable Burst Lengths:
- 4
- 8
On-Die Termination (ODT).
Available temperature range:
- 0°C to +70°C
- -40°C to +85°C
- Specific temperature range available upon request.
Available with screening option for high reliability applications (Space, etc.).
3D PLUS DDR2 Radiation Hardened Solution:
- TID > 100 Krad (Si).
- SEL immune > 68 MeV·cm²/mg.
- SEU immune by design (3.8E-9 upsets/SEU/day/module with 3DIPMC700).
- SEFI immune by design (with 3DIPMC700).