The 3D4D64G72LB2809 is a 64Gbits high speed DDR4 SDRAM, organized as 1024M x 64 bits and 8 bits additional for ECC.
This synchronous device operates at a maximum transfer rate of up to 2400 MT/s (DDR4-2400), for an aggregate data rate of 153.6Gbps. The module is designed to comply with the key DDR4 SDRAM features including: (1) posted CAS by programmable additive latency, (2) On Die Termination, (3) programmable driver strength data, (4) clock rate of 1200MHz.
All the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK_t rising and CK_c falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS_t and DQS_c) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a RAS_n and CAS_n multiplexing style. The data bus inversion (DBI) reduces the power consumption and ground bounce.
The 64Gbits DDR4 devices operate with two power supplies: 1.2V for VDD and VDDQ, and 2.5V for VPP wordline supply. This device is ideal for high-density memory applications that require high-speed transfer.
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