The 512 Mbit memory module seemingly replaces any SPI NOR Flash memory by featuring a high-speed, low pin count SPI compatible bus interface with a single 1.8 V power supply. It delivers up to 100 MBps reads and writes through 8 I/O signals with a clock frequency of 100 MHz.
This native latch-up immune memory, built on a FDSOI process, is radiation hardened by design. Additional protection against transient effects is provided by an embedded controller with ECC.
In addition, an ECC flag and an error counter are present to help the user with its error management strategy. These features are helpful to extend the lifetime of the module in radiation environment.
Key Features
Performances
Space Qualifications
Radiation Tolerance
3DMN512M04VS4867 is a high performance 512 Mbit Non-Volatile Memory with a serial interface.
Applications
More information
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Manufacturer Info
PERSONAL CONSULTATION
From component selection to design-in: our sales team advises you in person, by phone, video call or on site. We will set aside 30 minutes for you.
PERSÖNLICHE BERATUNG
Von der Bauteilauswahl bis zum Design-in: Unser Vertriebsteam berät Sie persönlich, telefonisch, per Videokonferenz oder vor Ort. Wir nehmen uns 30 Minuten Zeit.